Engineering electronic functionalities in nanowire-based devices: advantages from heterostructuring and electrostatic doping
Relatore: Francesco Rossella - NEST Laboratory, Scuola Normale Superiore and Istituto Nanoscienze-CNR.
Semiconductor nanowires and nanowire heterostructures provide a formidable playground for nanoscience and nanotechnology at large, allowing to enable unprecedented device functionalities, that find countless applications spanning from quantum computation-technologies and sensing to energy harvesting and machine learning.
We build on the epitaxial growth of III-V semiconductor nanowires, and demonstrate prototypical nanowire-based devices that use different strategies for the electrostatic doping of the nanostructures.
Electronic confinement in InP-InAs nanowire quantum dots is exploited for thermoelectric conversion  and to enable single electron transistors coupled to microwaves . Broken-gap InAs-GaSb core-shell nanowires allow to implement Esaki tunnel diodes  and open new perspectives for studying the physics of interacting electrons and holes at the nanoscale. Electric double layer transistors based on InAs nanowires gated by ionic liquids  enable the simultaneous gate-control of electrical conductivity and measurement of thermal conductivity in device architectures with suspended nanostructures .
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